• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    A color filter used in a color display device for displaying a color image by irradiating a color layer of the color filter with light includes a titanium dioxide layer having ultraviolet light shielding function formed in direct contact with the surface of the color layer at the upper side of the color layer in case that only the light incident on the color layer from the upper side of the color layer is prevented or an upper and lower titanium dioxide layers formed on and below the color layer in order to make the advantage being free from fading perfect. In the latter case, it is possible to restrict transmission of light having wavelength in the wavelength range of ultraviolet light to the color layer to thereby restrict direct decomposition of pigment molecules and obtain the advantage being free from fading, by directly covering the color filter with titanium dioxide at the upper side of the color layer and providing the lower titanium dioxide layer below the color layer.
    公开号:US20010007488A1
    申请号:US09/750,915
    申请日:2001-01-02
    公开日:2001-07-12
    发明作者:Atsumasa Sawada
    申请人:NEC Corp；
    IPC主号:G02B5-201
    专利说明:
    [0001] 1. Field of the Invention [0001]
    [0002] The present invention relates to a color filter for use in a flat panel display and, particularly, to a structure of a color filter for a liquid crystal display device. [0002]
    [0003] 2. Description of the Prior Art [0003]
    [0004] As a color filter for a liquid crystal display device, there are two types, in one of which a color filter is formed on the side of an opposing substrate opposing to a Thin Film Transistor (referred to as “TFT”, hereinafter) substrate and in the other of which a color filter is formed on the side of the TFT substrate. FIG. 1 is a cross section of the first example of a color filter to be formed on the side of an opposing substrate. As shown in FIG. 1, the color filter has a structure including a transparent substrate [0004] 41, a black matrix 42 formed on the transparent substrate 41 by forming a lattice pattern with using photolithography, etc., a color layer 46 printed or covered by using photolithography with color materials such as dyes, organic pigments or inorganic pigments such that the color materials fill spaces between lattices of the black matrix 42, a resin film layer 44 covering the color layer 46 and the black matrix 42 and a pixel electrode 45 formed on the resin film layer 44.
    [0005] FIG. 2 shows a cross section of the second example of the color filter to be formed on the side of the opposing substrate, which is disclosed in Japanese Patent Application Laid-open No. H5-119306 and may belong to the same category as that of the present invention. The second example, which is called as Color filter-On-TFT (COT), includes a transparent substrate [0005] 61, a color layer 66 formed on the transparent substrate 61, a resin film layer 64 formed on the color layer 66, an upper titanium dioxide (TiO2) layer 73 formed on the resin film layer 64 and a pixel electrode 65 formed on the upper titanium dioxide layer 73. The upper titanium dioxide layer 73 is formed for improving adhesion between the resin film layer 64 and the pixel electrode layer 65.
    [0006] FIG. 3 shows a cross section of the third example of the so-called color filter-on-TFT where a color filter is formed on the side of the TFT substrate, which is disclosed in EURO DISPLAY '99 LATE-NEWS PAPER P77-80. The third example includes a transparent substrate [0006] 81, a TFT formed thereon, which is composed of a gate wiring 87, a gate insulating film 88, a semiconductor film 91, a drain wiring 89 and a source wiring 90 and a protective insulating film 92 covering the TFT. As shown, an upper portion of the TFT except the protective insulating film 92 has a similar structure to that shown in FIG. 1. That is, a color layer 86 having an opening portion above the semiconductor film 91 of the TFT is formed on the protective insulating film 92 and the opening portion is filled with a black matrix 82. Further, the color layer 86 and a black matrix 82 are covered by a resin film layer 84 and a transparent pixel electrode 85 of ITO (Indium Tin Oxide).
    [0007] However, in a liquid crystal display of such as IPS (In-Plane-Switched) system, which has no pixel electrode or the COT shown in FIG. 2, there is a possibility that a portion of the resin film layer [0007] 84 functioning as the over coat is exposed to the liquid crystal layer depending on a layout of the pixel electrode 85.
    [0008] If the resin film layer [0008] 84 is exposed partially, oxygen contained in the liquid crystal layer diffuses through the exposed portion into the color layer 86. Oxygen molecules reached the color layer 86 are activated by excitation energy of external ultraviolet ray, so that color materials such as organic pigments used in the color layer are decomposed, resulting in color degradation.
    [0009] Therefore, when a layer, which is formed above the color layer [0009] 86 in order to shut out oxygen molecules from the color -layer 86, does not cover the color layer 86 completely, i.e., some part of the layer is opened above the color layer 86, some problems as mentioned above occurs in the conventional color filter substrate for liquid crystal display.
    [0010] The structure including the upper titanium dioxide layer [0010] 73 such as shown in FIG. 2, which may block external ultraviolet ray, is known. In such color filter substrate, however, there is a possibility that the color layer 66 is degraded by activated oxygen dissolved in the resin film layer 64. SUMMARY OF THE INVENTION
    [0011] An object of the present invention is to provide a structure of a color filter which is not degraded by ultraviolet ray or oxygen on a substrate with a color filter. [0011]
    [0012] In order to achieve the above object, the color filter according to the present invention includes a basic light shielding structure which blocks ultraviolet ray incident on a color layer formed on a substrate at least at the upper side of the color layer. The basic light shielding structure includes two types of light shielding structures, wherein the first light shielding structure blocking ultraviolet ray incident on the surface of the color layer at the upper side of the color layer by directly covering the surface of the color layer only at the upper side of the color layer and the second light shielding structure covering both on and below the color layer. [0012]
    [0013] The first light shielding structure includes the color layer formed on the substrate and an upper light shielding layer, which directly covers the surface of the color layer at the upper side of the color layer. [0013]
    [0014] The second light shielding structure includes an upper light shielding layer formed on the color layer and a lower light shielding layer formed below the color layer, blocking ultraviolet ray by both of the upper light shielding layer and the lower light shielding layer from the color layer. Furthermore, the upper light shielding layer covers the surface of the color layer at the upper side of the color layer, and more concretely covers directly the surface of the color layer at the upper side of the color layer. [0014]
    [0015] The color filter according to the second light shielding structure of the present invention includes a substrate, a color layer on the substrate, a gate electrode and a semiconductor layer which composes a channel region of a TFT between the substrate and the color layer, the color layer being formed above the TFT, an upper light shielding layer covering the color layer. The color layer includes an opening area above the channel region of the TFT. The color filter further includes a black matrix layer formed between the TFT and the upper light shielding layer. The black matrix layer covers at least the opening area of the color layer and locates above the channel region of the TFT. [0015]
    [0016] The light shielding structure of the color filter includes a titanium dioxide layer. [0016] BRIEF DESCRIPTION OF THE DRAWINGS
    [0017] The above mentioned and other objects, features and advantages of the present invention will become more apparent by reference to the following detailed description of the invention taken in conjunction with the accompanying drawings, in which: [0017]
    [0018] FIG. 1 is a cross section of the first example of a conventional color filter; [0018]
    [0019] FIG. 2 is a cross section of the second example of the conventional color filter; [0019]
    [0020] FIG. 3 is a cross section of the third example of the conventional color filter; [0020]
    [0021] FIG. 4 is a cross section of a color filter according to the first embodiment of the present invention; [0021]
    [0022] FIG. 5 is a cross section of a color filter according to the second embodiment of the present invention; and [0022]
    [0023] FIG. 6 is a cross section of a modification of the first embodiment of the present invention. [0023] DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
    [0024] The first embodiment of the present invention will be described with reference to FIG. 4, which is a cross section of a color filter formed on the side of the opposing substrate opposing to a TFT substrate. [0024]
    [0025] In FIG. 4, a color filter is composed of a transparent substrate [0025] 1, a lower titanium dioxide layer 3 capable of shielding ultraviolet ray, a black matrix 2, a color layer 6, an upper titanium dioxide layer 13 capable of shielding ultraviolet ray and blocking oxygen, a resin film layer 4 and a pixel electrode 5, all of which are formed on the transparent substrate 1 in the order. The lower titanium dioxide layer 3 and the upper titanium dioxide layer 13, which are several hundreds nm thick, are formed by vacuum deposition, chemical epitaxy or sputtering, etc., respectively. The black matrix 2, the color layer 6, the resin film layer 4 and the pixel electrode 5 are formed by using known methods, respectively.
    [0026] Organic pigments to be contained in the color layer [0026] 6 of the color filter may include phthalocyanine derivatives, anthraquinone derivatives, indigo derivatives, oxazine derivatives and/or perylene derivatives, etc. These organic pigments generally have unsaturated groups necessary to shift up electron absorption wavelength spectrum of mother molecules of the pigments, which are strongly related to fading of pigments. The mechanism of fading may be considered due to decomposition of chromophore caused by active oxygen such as singlet term oxygen or direct decomposition of chromophore molecular structure caused by ultraviolet ray. Incidental chemical reactions of the degradation for the case of the decomposition of chromophore by active oxygen are as follows:
    [0027] (Initiation) [0027]
    [0028] pattern 1 [0028]
    [0029] UV [0029]
    [0030] RH→R[0030] •+•H
    [0031] pattern 2 [0031]
    [0032] UV [0032]
    [0033] RH→RH* (excitation of pigment molecule) [0033]
    [0034] (Propagation Reaction) [0034]
    [0035] 1. Production of hydroperoxide [0035]
    [0036] pattern 1 [0036]
    [0037] R[0037] •+O2→ROO•
    [0038] RH+ROO[0038] •→R•+ROOH
    [0039] pattern 2 [0039]
    [0040] RH*+O[0040] 2→ROOH
    [0041] 2. Production of oxyradical [0041]
    [0042] pattern 1 [0042]
    [0043] ROOH→RO[0043] •+•OH
    [0044] pattern 2 [0044]
    [0045] 2ROOH→ROO[0045] •+RO•+H2O
    [0046] 3. Decomposition of oxyradical [0046]
    [0047] RH+RO[0047] •→ROH+R•
    [0048] It is well known that titanium dioxide (TiO[0048] 2) has insensitivity and shielding characteristics to light having wavelength in ultraviolet light wavelength range. It is further known that titanium dioxide has oxygen blocking characteristics (cf. Japanese Patent Application Laid-open No. H5-119306). Since titanium dioxide is a single crystalline substance, which is transparent for visible light, it can be applied to a color filter.
    [0049] From the foregoing, propagation of light having wavelength in ultraviolet wavelength range to the color layer [0049] 6 is prevented by the provision of the upper and lower titanium dioxide layers 13 and 3, so that it is possible to restrict direct decomposition of pigment molecules to thereby prevent fading. Further, since the upper titanium dioxide layer 13 blocks oxygen immigration into the color layer 6 and restricts autoxidation reaction, the advantage being free from fading is obtained.
    [0050] Now, the second embodiment of the present invention will be described with reference to FIG. 5. [0050]
    [0051] A color filter shown in FIG. 5 is composed of a transparent substrate [0051] 21, a lower titanium dioxide layer 23, a TFT including a gate wiring 27, a gate insulating film 28, a drain wiring 29, a source wiring 30, a semiconductor film 31 and a protective insulating film 32, a black matrix 22, a color layer 26, an upper titanium dioxide layer 33, a resin film layer 24 and a pixel electrode 25, all of which are formed on the transparent substrate 21 in the order. The lower titanium dioxide layer and the upper titanium dioxide layer, which are several hundreds nm thick, are formed by vacuum deposition, chemical epitaxy or sputtering, etc., respectively. The black matrix 22, the color layer 26, the resin film layer 24 and the pixel electrode 25 are formed by using known methods, respectively.
    [0052] With the structure of the color filter on the TFT as mentioned above, the same advantages as those obtainable in the first embodiment can be obtained. That is, the upper and lower titanium dioxide layers function to prevent ultraviolet light from reaching the color layer [0052] 26 to thereby restrict direct decomposition of pigment molecules and, further, the upper titanium dioxide layer 33 functions to prevent oxygen from reaching the color layer 26 to thereby restrict progress of autoxidation reaction so that the advantage being free from fading is obtained.
    [0053] In each of the described embodiments, the titanium dioxide layers are formed on and below the color layer. It should be noted, however, that the advantage being free from fading can be obtained by a color filter structure in which a titanium dioxide layer is formed in direct contact with the surface of the color layer only at the upper side of the color layer. [0053]
    [0054] In the case where titanium dioxide having ultraviolet light shielding function is formed as the upper titanium dioxide layer only at the upper side of the color layer, the upper titanium dioxide is formed in direct contact with the surface of the color layer. In the case where, in order to make the advantage being free from fading perfect, the lower titanium dioxide layer is further formed, it is possible to restrict transmission of light having wavelength in the wavelength range of ultraviolet light to the color layer to thereby restrict direct decomposition of pigment molecules and obtain the advantage being free from fading, by directly covering the color filter with titanium dioxide at the upper side of the color layer and providing the lower titanium dioxide layer below the color layer. Further, since immigration of oxygen to the color layer from the upper side of the color layer is blocked, the advantage being free from fading by preventing autoxidation from making progress is also obtained. [0054]
    [0055] In addition, in the case of the first embodiment in which the upper and lower titanium dioxide layers are formed, when the relations of the titanium dioxide layers [0055] 13 and the resin film layer 4 is inverted as shown in FIG. 6 such that the resin film layer 4 is sandwiched between the color layer 6 and the titanium dioxide layer 13, the similar advantages in the first embodiment are obtained. In this structure, the possibility of fading may be increased correspondingly to the amount of oxygen contained in the resin film layer 4. However, the advantage being free from fading is larger than that obtainable by the second prior art example by the presence of the lower titanium dioxide layer.
    权利要求:
    Claims (7)
    [1" id="US-20010007488-A1-CLM-00001] 1. A color filter comprising: a color layer formed on a substrate and a light shielding structure for blocking ultraviolet light incident on a surface of said color layer from an upper side of said color layer, said light shielding structure being one of a first light shielding structure directly covering the surface of said color layer only at the upper side of said color layer and a second light shielding structure sandwiching said color layer therebetween.
    [2" id="US-20010007488-A1-CLM-00002] 2. A color filter as claimed in
    claim 1 , wherein said first light shielding structure includes said color layer formed on said substrate and an upper light shielding layer directly covering said surface of said color layer at the upper side of said color layer.
    [3" id="US-20010007488-A1-CLM-00003] 3. A color filter as claimed in
    claim 1 , wherein said second light shielding structure includes an upper light shielding layer and a lower light shielding layer, both of which prevent ultraviolet ray from incident on said color layer, formed on and below said color layer each, and said upper light shielding layer directly covers the surface of said color layer at the upper side of said color layer.
    [4" id="US-20010007488-A1-CLM-00004] 4. A color filter as claimed in
    claim 1 , wherein said second light shielding structure includes an upper light shielding layer and a lower light shielding layer, both of which prevent ultraviolet ray from incident on said color layer, formed on and below said color layer each, said upper light shielding layer covering the surface of said color layer with being separated from the surface of said color layer.
    [5" id="US-20010007488-A1-CLM-00005] 5. A color filter as claimed in
    claim 1 , further comprising a gate electrode and a semiconductor layer which composes the channel region of a thin film transistor formed between said substrate and said color layer, said color layer being formed above said thin film transistor and an upper light shielding layer covering said color layer.
    [6" id="US-20010007488-A1-CLM-00006] 6. A color filter as claimed in
    claim 5 , wherein said color layer includes an opening above said channel region of said thin film transistor and a black matrix layer formed between said thin film transistor and said upper light shielding layer, said black matrix layer covering at least said opening portion of said color layer and said channel region of said thin film transistor.
    [7" id="US-20010007488-A1-CLM-00007] 7. A color filter as claimed in
    claim 1 , wherein said light shielding structure includes a titanium dioxide layer.
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    同族专利:
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    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    US20040119902A1|2002-12-18|2004-06-24|Lg.Philips Lcd Co., Ltd.|Liquid crystal display device and method of fabricating the same|
    US7340869B2|2002-09-13|2008-03-11|Scheuten Glagroep Bv|Fireproof glazing unit|
    US20100309151A1|2009-06-04|2010-12-09|Au Optronics Corp.|Touch panel and method for manufacturing the same|
    US20170010392A1|2015-03-18|2017-01-12|Boe Technology Group Co., Ltd.|Black matrix, flat panel display device and method for producing the same|
    CN106356407A|2016-10-26|2017-01-25|京东方科技集团股份有限公司|Thin film transistor and preparation method thereof as well as array substrate and preparation method thereof|
    US20170160599A1|2015-12-04|2017-06-08|Syndiant, Inc|Light Modulating Backplane with Multi-Layered Pixel Electrodes|
    CN109407390A|2018-11-28|2019-03-01|武汉华星光电技术有限公司|The production method and liquid crystal display panel of liquid crystal display panel|JPS60247202A|1984-05-23|1985-12-06|Seiko Epson Corp|Color filter|
    JPH04110902A|1990-08-31|1992-04-13|Kyocera Corp|Color filter and production thereof|
    JPH05119306A|1991-10-25|1993-05-18|A G Technol Kk|Production of color filter substrate|
    JP3130601B2|1991-11-12|2001-01-31|九州日本電気株式会社|Optical color filter for solid-state imaging device, method for manufacturing the same, and solid-state imaging device|
    JPH095733A|1995-06-26|1997-01-10|Toshiba Corp|Liquid crystal display element|
    US5835177A|1995-10-05|1998-11-10|Kabushiki Kaisha Toshiba|Array substrate with bus lines takeout/terminal sections having multiple conductive layers|
    KR100190855B1|1995-12-22|1999-06-01|윤종용|Color filter for lcd and method of fabricating the same|
    JP2853656B2|1996-05-22|1999-02-03|日本電気株式会社|LCD panel|
    JP3264364B2|1997-01-21|2002-03-11|シャープ株式会社|Manufacturing method of liquid crystal display device|KR100855884B1|2001-12-24|2008-09-03|엘지디스플레이 주식회사|Align Key for Liquid Crystal Display Device|
    TWI266092B|2002-12-31|2006-11-11|Hon Hai Prec Ind Co Ltd|Light guide plate and back light system with the same|
    CN1313870C|2003-05-09|2007-05-02|统宝光电股份有限公司|Colour optical filter and producing method thereof|
    US7612860B2|2003-12-01|2009-11-03|Lg Display Co., Ltd.|Color filter on thin film transistor type liquid crystal display device and method of fabricating the same with an alignment key formed with the orientation layer|
    KR101033459B1|2003-12-01|2011-05-09|엘지디스플레이 주식회사|LCD with color-filter on TFT and method of fabricating of the same|
    US8518498B2|2009-09-02|2013-08-27|Samsung Display Co., Ltd.|Liquid crystal display and manufacturing method thereof|
    CN103091894B|2013-01-18|2016-07-06|京东方科技集团股份有限公司|A kind of color membrane substrates and liquid crystal panel|
    TWI506341B|2013-07-18|2015-11-01|Ye Xin Technology Consulting Co Ltd|Touch and display panel|
    法律状态:
    2001-01-02| AS| Assignment|Owner name: NEC CORPORATION, JAPAN Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:SAWADA, ATSUMASA;REEL/FRAME:011412/0308 Effective date: 20001225 |
    2003-04-30| AS| Assignment|Owner name: NEC LCD TECHNOLOGIES, LTD., JAPAN Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:NEC CORPORATION;REEL/FRAME:013617/0012 Effective date: 20030401 |
    2003-10-30| STCF| Information on status: patent grant|Free format text: PATENTED CASE |
    2007-04-20| FPAY| Fee payment|Year of fee payment: 4 |
    2010-06-07| AS| Assignment|Owner name: NEC CORPORATION,JAPAN Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:NEC LCD TECHNOLOGIES, LTD.;REEL/FRAME:024492/0176 Effective date: 20100301 Owner name: NEC CORPORATION, JAPAN Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:NEC LCD TECHNOLOGIES, LTD.;REEL/FRAME:024492/0176 Effective date: 20100301 |
    2010-11-09| AS| Assignment|Owner name: CHIMEI INNLOLUX CORPORATION, TAIWAN Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:NEC CORPORATION;REEL/FRAME:025302/0783 Effective date: 20101014 |
    2011-05-18| AS| Assignment|Owner name: CHIMEI INNOLUX CORPORATION, TAIWAN Free format text: CORRECTIVE ASSIGNMENT TO CORRECT THE NAME AND ADDRESS OF THE RECEIVING PARTY PREVIOUSLY RECORDED ON REEL 025302 AND FRAME 0783 ON NOVEMBER 9, 2010;ASSIGNOR:NEC CORPORATION;REEL/FRAME:026296/0825 Effective date: 20101014 |
    2011-05-18| FPAY| Fee payment|Year of fee payment: 8 |
    2014-04-03| AS| Assignment|Owner name: INNOLUX CORPORATION, TAIWAN Free format text: CHANGE OF NAME;ASSIGNOR:CHIMEI INNOLUX CORPORATION;REEL/FRAME:032604/0487 Effective date: 20121219 |
    2015-05-18| FPAY| Fee payment|Year of fee payment: 12 |
    优先权:
    申请号 | 申请日 | 专利标题
    JP2000-001254||2000-01-07||
    JP1254/2000||2000-01-07||
    JP2000001254A|JP2001194518A|2000-01-07|2000-01-07|Color filter|
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